Tintronics completed the J-lead Forming of a MOSFET transistor, which is used in a high-efficiency switching application for a military client. The company employed a custom-designed forming die, a bench-top lead form press and a manual hot solder dip station. The parts meet tight tolerances of .161” ±.010” from the lead exit to the inside bend and .050” ±.030” on the radius. The primary processes, lead forming and tinning, and the secondary processes, lead scanning and visual and final inspections, ensured the parts met the customer-supplied specifications as well as the IPC J-STD-001, IPC/JEDEC J-STD-033B.1 and ANSI/ESD S20.20 standards. The production runs were low-volume.
Project Highlights for this MOSFET Transistor for the Military
Product Description | This MOSFET transistor is used within a high efficiency switching application |
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Capabilities Applied/Processes | Primary: Lead Forming Tinning | Secondary: Lead Scanning Inspection |
Equipment Used to Manufacture Part | Custom designed forming die Benchtop lead form press | Manual hot solder dip station |
Package Style | TO-247 | |
Tightest Tolerances | Lead exit to inside bend .161 ±.010 Radius .050 ±.030 | |
Material of Leads | Plated copper alloy | |
Material Used | Sn63 Pb37 solder | |
In process testing performed | Visual Inspection Final Inspection | |
Industry for Use | Defense | |
Quantity | Low volume | |
Standards Met | Customer supplied specifications IPC J-STD-001 | IPC/JEDEC J-STD-033 ANSI/ESD S20.20 |
Project Name | J-Lead Forming of MOSFET Transistor |